DS1220AB-100-IND Datasheet PDF - Dallas Semiconductor

●DESCRIPTION

●The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs

●organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and

●control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition.

●FEATURES

●10 years minimum data retention in the absence of external power

●Data is automatically protected during power loss

●Directly replaces 2k x 8 volatile static RAM or EEPROM

●Unlimited write cycles

●Low-power CMOS

●JEDEC standard 24-pin DIP package

●Read and write access times as fast as 100 ns

●Lithium energy source is electrically

●disconnected to retain freshness until power is applied for the first time

●Full ±10% VCCoperating range (DS1220AD)

●Optional ±5% VCCoperating range (DS1220AB)

●Optional industrial temperature range of -40°C to +85°C, designated IND