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FB180SA10P
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FB180SA10P Datasheet PDF (3 Pages)
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FB180SA10P Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
SOT-227
Drain to Source Resistance (on) (Rds)
0.0065 Ω
Polarity
N-Channel
Power Dissipation
480 W
Input Capacitance
10700pF @25V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
180 A
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

FB180SA10P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Size-Length
38.3 mm
Size-Height
12.3 mm
Operating Temperature
-55℃ ~ 150℃

FB180SA10P Documents

Vishay Semiconductor
3 Pages / 0.09 MByte

FB180SA10 Documents

International Rectifier
MOSFET N-CH 100V 180A SOT-227
VISHAY
SOT-227 N-CH 100V 180A
IRF
Power MOSFET
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.0065Ω; ID 180A; SOT-227; PD 480W; VGS +/-20
International Rectifier
VISHAY
SOT-227 N-CH 100V 180A
Vishay Siliconix
n Channel Mosfet, 100V, 180A, Sot-227
Vishay Intertechnology
Power Field-Effect Transistor, 180A I(D), 100V, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4
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