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FCD7N60TF
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FCD7N60TF Datasheet PDF (9 Pages)
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FCD7N60TF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
600 V
Current Rating
7.00 A
Case/Package
TO-252-3
Drain to Source Resistance (on) (Rds)
530 mΩ
Polarity
N-Channel
Power Dissipation
83 W
Input Capacitance
920 pF
Gate Charge
30.0 nC
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
7.00 A
Rise Time
55 ns
Input Capacitance (Ciss)
920pF @25V(Vds)
Input Power (Max)
83 W
Fall Time
32 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
83W (Tc)

FCD7N60TF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Cut Tape (CT)
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.39 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

FCD7N60TF Documents

Fairchild
9 Pages / 0.89 MByte
Fairchild
10 Pages / 0.53 MByte

FCD7N60 Documents

Fairchild
Trans MOSFET N-CH 600V 7A 3Pin(2+Tab) DPAK T/R
Fairchild
FAIRCHILD SEMICONDUCTOR FCD7N60TM Power MOSFET, N Channel, 7A, 600V, 0.53Ω, 10V, 5V
ON Semiconductor
MOSFET N-CH 600V 7A DPAK
Fairchild
Trans MOSFET N-CH 600V 7A 3Pin(2+Tab) DPAK T/R
Fairchild
MOSFET N-CH 600V 7A DPAK
ON Semiconductor
Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R
ON Semiconductor
N-Channel SuperFET® MOSFET 600V, 7A, 600mΩ
ON Semiconductor
MOSFET N-CH 600V 7A DPAK
Fairchild
DESIGN/PROCESS CHANGE NOTIFICATION
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