FCP190N65S3 Datasheet PDF - ON Semiconductor

●SuperFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

●Features |   | Benefits

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● 700 V @ TJ = 150 oC

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● Higher system reliability at low temperature operation

● Ultra Low Gate Charge (Typ. Qg = 33 nC)

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● Lower switching loss

● Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)

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● Lower switching loss

● Optimized Capacitance

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● Lower peak Vds and lower Vgs oscillation

● Internal Gate resistance: 7.0 ohm

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● Lower peak Vds and lower Vgs oscillation

● Typ. RDS(on) = 159 mΩ

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● 100% Avalanche Tested

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● RoHS Compliant

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