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Part Datasheet Search > Infineon > FD150R12RT4HOSA1 Datasheet PDF
FD150R12RT4HOSA1
$ 98.068
FD150R12RT4HOSA1 Datasheet PDF (10 Pages)
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FD150R12RT4HOSA1 Specifications

TYPE
DESCRIPTION
Number of Pins
5 Pin
Case/Package
AG-34MM-1
Power Dissipation
790000 mW
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
9.3nF @25V
Input Power (Max)
790 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
790000 mW

FD150R12RT4HOSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Operating Temperature
-40℃ ~ 150℃ (TJ)

FD150R12RT4HOSA1 Documents

Infineon
10 Pages / 0.65 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
40 Pages / 6.73 MByte

FD150R12RT4 Documents

Infineon
INFINEON FD150R12RT4 IGBT Array & Module Transistor, N Channel, 150A, 1.75V, 790W, 1.2kV
Infineon
Trans IGBT Module N-CH 1200V 150A 790000mW 5Pin 34MM-1 Tray
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