FDC6327C Datasheet PDF - ON Semiconductor

●These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

●Features

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● N-Channel 2.7A, 20V. RDS(on) = 0.08Ω @ VGS = 4.5V, RDS(on) = 0.12Ω @ VGS = 2.5V P-Channel -1.6A, -20V.RDS(on) = 0.17Ω @VGS= -4.5V, RDS(on) = 0.25Ω @ V GS = -2.5V

● Fast switching speed.

● Low gate charge.

● High performance trench technology for extremelylow RDS(ON) .

● SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick).