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FDFMA3N109
$ 0.293
FDFMA3N109 Datasheet PDF
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FDFMA3N109 Specifications

TYPE
DESCRIPTION
Number of Pins
6 Pin
Case/Package
QFN-6
Power Dissipation
1.5 W
Drain to Source Voltage (Vds)
30 V
Rise Time
8 ns
Input Capacitance (Ciss)
190pF @15V(Vds)
Input Power (Max)
650 mW
Fall Time
2 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1500 mW

FDFMA3N109 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃

FDFMA3N109 Documents

ON Semiconductor
9 Pages / 0.5 MByte

FDFMA3 Documents

Fairchild
FAIRCHILD SEMICONDUCTOR FDFMA3N109 MOSFET Transistor, N Channel + Schottky, 2.9A, 30V, 0.075Ω, 4.5V, 1V
ON Semiconductor
MOSFET Transistor, N Channel, 2.9A, 30V, 0.075Ω, 1V, 1V
Fairchild
Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3.3A, 87mOhms
ON Semiconductor
MOSFET P CH 30V 3.3A MICRO 2X2
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