FDG6335N Datasheet PDF - ON Semiconductor

●The FDG6335N is a PowerTrench® dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS (ON) and gate charge (QG) in a small package. It is suitable for use with DC-to-DC converters and load switch applications.

● Low gate charge

● High performance Trench technology for extremely low RDS (ON)

● Compact industry standard surface-mount-package

● ±12V Gate to source voltage

● 0.7A Continuous drain current

● 2.1A Pulsed drain current