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FDP2D3N10C Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Case Package:

TO-220

Description:

Trans MOSFET N-CH 100V 222A 3-Pin(3+Tab) TO-220 Tube

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FDP2D3N10C Datasheet PDF

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FDP2D3N10C Specifications

TYPE

DESCRIPTION

Number of Pins

3 Pin

Case/Package

TO-220

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.0021 Ω

Power Dissipation

214 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

100 V

Rise Time

35 ns

Input Capacitance (Ciss)

7980pF @50V(Vds)

Fall Time

32 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2400 mW

FDP2D3N10C Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

FDP2D3N10C Environmental

FDP2D3N10C Documents

FDP2D3N10C Other Datasheet PDF

ON Semiconductor

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FDP2D3N10 Documents

FDP2D3N10C Datasheet PDF

ON Semiconductor

Trans MOSFET N-CH 100V 222A 3-Pin(3+Tab) TO-220 Tube

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