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FDT1600N10ALZ Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

MOSFETs

Case Package:

SOT-223

Description:

N-Channel PowerTrench® MOSFET 100V, 5.6A, 160mΩ, 4000-REEL

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FDT1600N10ALZ Datasheet PDF (10 Pages)

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FDT1600N10ALZ Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Case/Package

SOT-223

Number of Positions

4 Position

Drain to Source Resistance (on) (Rds)

0.121 Ω

Power Dissipation

10.42 W

Threshold Voltage

2.8 V

Drain to Source Voltage (Vds)

100 V

Rise Time

2.5 ns

Input Capacitance (Ciss)

169pF @50V(Vds)

Fall Time

2.4 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

10.42 W

FDT1600N10ALZ Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Size-Length

6.7 mm

Size-Width

3.7 mm

Size-Height

1.7 mm

Operating Temperature

-55℃ ~ 150℃

FDT1600N10ALZ Environmental

FDT1600N10ALZ Function Overview

FDT1600N10ALZ Documents

FDT1600N10ALZ Other Datasheet PDF

ON Semiconductor

10 Pages / 0.72 MByte

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FDT1600N10ALZ Datasheet PDF

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Trans MOSFET N-CH 100V 5.6A 4Pin SOT-223 T/R

FDT1600N10ALZ Datasheet PDF

ON Semiconductor

N-Channel PowerTrench® MOSFET 100V, 5.6A, 160mΩ, 4000-REEL

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