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Part Datasheet Search > Infineon > FF300R17KE4PHOSA1 Datasheet PDF
FF300R17KE4PHOSA1
$ 217.812

FF300R17KE4PHOSA1 Specifications

TYPE
DESCRIPTION
Case/Package
AG-62MM-1
Breakdown Voltage (Collector to Emitter)
1700 V
Input Capacitance (Cies)
24.5nF @25V

FF300R17KE4PHOSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Operating Temperature
-40℃ ~ 150℃

FF300R17KE4PHOSA1 Documents

Infineon
9 Pages / 0.56 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
36 Pages / 5.44 MByte

FF300R17KE4 Documents

Infineon
INFINEON FF300R17KE4 IGBT Array & Module Transistor, Dual NPN, 440A, 1.95V, 1.8kW, 1.7kV, Module
Infineon
INFINEON FF300R17KE4HOSA1 IGBT Array & Module Transistor, Dual NPN, 440A, 1.95V, 1.8kW, 1.7kV, Module
Infineon
Our well-known 62mm 1700V dual IGBT modules with pre-applied Thermal Interface Material are are the right choice for your design.
Infineon
Our well-known 62mm 1700V dual IGBT modules with pre-applied Thermal Interface Material are are the right choice for your design.
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