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FGD2736G3-F085 Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Case Package:

TO-252-3

Description:

Trans IGBT Chip N-CH 350V 21A 150000mW Automotive 3Pin(2+Tab) DPAK T/R

Pictures:

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Documentation:

FGD2736G3-F085 Datasheet (8 Pages)

FGD2736G3-F085 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-252-3

Breakdown Voltage (Collector to Emitter)

360 V

Reverse recovery time

7 µs

Input Power (Max)

150 W

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-40 ℃

Power Dissipation (Max)

150000 mW

View Datasheet >

FGD2736G3-F085 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

-40℃ ~ 175℃ (TJ)

View Datasheet >

FGD2736G3-F085 Environmental

FGD2736G3-F085 Function Overview

FGD2736G3-F085 Documents

FGD2736G3-F085 Datasheet

ON Semiconductor

8 Pages / 0.98 MByte

FGD2736G3-F085 Drawing Diagrams

ON Semiconductor

2 Pages / 0.14 MByte

FGD2736G3 Documents

FGD2736G3-F085 Datasheet PDF

ON Semiconductor

Trans IGBT Chip N-CH 350V 21A 150000mW Automotive 3Pin(2+Tab) DPAK T/R

FGD2736G3_F085 Datasheet PDF

ON Semiconductor

EcoSPARK® 3 270mJ, 360V, N-Channel Ignition IGBT

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