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Part Datasheet Search > IGBTs > ON Semiconductor > FGP20N60UFDTU Datasheet PDF
FGP20N60UFDTU
$ 3.341
FGP20N60UFDTU Datasheet PDF
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FGP20N60UFDTU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Power Dissipation
165 W
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
35 ns
Input Power (Max)
165 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
165 W

FGP20N60UFDTU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.67 mm
Size-Width
4.83 mm
Size-Height
16.51 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

FGP20N60UFDTU Documents

ON Semiconductor
9 Pages / 0.42 MByte
ON Semiconductor
1 Pages / 0.09 MByte
ON Semiconductor
21 Pages / 0.73 MByte

FGP20N60 Documents

Fairchild
Trans IGBT Chip N-CH 600V 40A 3Pin(3+Tab) TO-220AB Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 40A 165000mW 3Pin(3+Tab) TO-220AB Tube
Freescale
IGBT 600V 40A 165W TO220
Fairchild
600V, 20A Field Stop IGBT
ON Semiconductor
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
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