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FGPF10N60UNDF Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

IGBTs

Case Package:

TO-220-3

Description:

Trans IGBT Chip N-CH 600V 20A 42000mW 3Pin(3+Tab) TO-220FP Tube

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FGPF10N60UNDF Datasheet PDF (9 Pages)

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FGPF10N60UNDF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Power Dissipation

42000 mW

Breakdown Voltage (Collector to Emitter)

600 V

Reverse recovery time

37.7 ns

Input Power (Max)

42 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

42 W

FGPF10N60UNDF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

10.36 mm

Size-Width

4.9 mm

Size-Height

16.07 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

FGPF10N60UNDF Environmental

FGPF10N60UNDF Export Classifications

FGPF10N60UNDF Function Overview

FGPF10N60UNDF Documents

FGPF10N60UNDF Other Datasheet PDF

ON Semiconductor

9 Pages / 0.25 MByte

FGPF10N60 Documents

FGPF10N60UNDF Datasheet PDF

ON Semiconductor

Trans IGBT Chip N-CH 600V 20A 42000mW 3Pin(3+Tab) TO-220FP Tube

FGPF10N60UNDF Datasheet PDF

Fairchild

Trans IGBT Chip N-CH 600V 20A 42000mW 3Pin(3+Tab) TO-220F Rail

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