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FGY60T120SQDN Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Case Package:

TO-247-3

Description:

Trans IGBT Chip N-CH 1200V 120A 517000mW 3-Pin(3+Tab) TO-247 Tube

Pictures:

3D Model

Symbol

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Product Pictures

Documentation:

FGY60T120SQDN Datasheet (9 Pages)

FGY60T120SQDN Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-247-3

Number of Positions

3 Position

Power Dissipation

517 W

Breakdown Voltage (Collector to Emitter)

1200 V

Input Power (Max)

517 W

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

517000 mW

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FGY60T120SQDN Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 175℃ (TJ)

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FGY60T120SQDN Environmental

FGY60T120SQDN Function Overview

FGY60T120SQDN Documents

FGY60T120SQDN Datasheet

ON Semiconductor

9 Pages / 0.53 MByte

FGY60T120SQDN Other Datasheet PDF

ON Semiconductor

9 Pages / 0.53 MByte

FGY60T120 Documents

FGY60T120SQDN Datasheet PDF

ON Semiconductor

Trans IGBT Chip N-CH 1200V 120A 517000mW 3-Pin(3+Tab) TO-247 Tube

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