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Part Datasheet Search > Infineon > FP25R12W2T4PBPSA1 Datasheet PDF
FP25R12W2T4PBPSA1
$ 50.367

FP25R12W2T4PBPSA1 Specifications

TYPE
DESCRIPTION
Case/Package
AG-EASY2B-1
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
1.45nF @25V
Input Power (Max)
20 mW
Operating Temperature (Max)
150 ℃

FP25R12W2T4PBPSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Operating Temperature
-40℃ ~ 150℃

FP25R12W2T4PBPSA1 Documents

Infineon
12 Pages / 0.78 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
33 Pages / 2.24 MByte

FP25R12W2T4 Documents

Infineon
Trans IGBT Module N-CH 1200V 39A 175000mW 23Pin EASY2B Tray
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Trans IGBT Module N-CH 1.2kV 39A 23Pin EASY2B-2
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Trans IGBT Module N-CH 1200V 39A 175000mW 23Pin EASY2B-2 Tray
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Trans IGBT Module N-CH 1200V 39A 175000mW 23Pin EASY2B-2 Tray
Infineon
EasyPIM™ 2B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and pre-applied Thermal Interface Material.
Infineon
EasyPIM™ 2B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material.
Infineon
EasyPIM™ 2B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and pre-applied Thermal Interface Material.
Infineon
EasyPIM™ 2B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material.
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