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Part Datasheet Search > IGBTs > Infineon > FP50R07N2E4B11BOSA1 Datasheet PDF
FP50R07N2E4B11BOSA1
$ 65.89
FP50R07N2E4B11BOSA1 Datasheet PDF (12 Pages)
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FP50R07N2E4B11BOSA1 Specifications

TYPE
DESCRIPTION
Number of Pins
31 Pin
Case/Package
AG-ECONO2-4
Power Dissipation
190000 mW
Breakdown Voltage (Collector to Emitter)
650 V
Input Capacitance (Cies)
3.1nF @25V
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
190000 mW

FP50R07N2E4B11BOSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Size-Length
107.5 mm
Size-Width
45 mm
Size-Height
17 mm
Operating Temperature
-40℃ ~ 150℃

FP50R07N2E4B11BOSA1 Documents

Infineon
12 Pages / 1.04 MByte
Infineon
1 Pages / 0.03 MByte
Infineon
33 Pages / 2.24 MByte

FP50R07N2E4B11 Documents

Infineon
Trans IGBT Module N-CH 650V 70A 31Pin
Infineon
Trans IGBT Module N-CH 650V 70A 190000mW 31Pin Tray
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