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FQA10N60C
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FQA10N60C Datasheet PDF (8 Pages)
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FQA10N60C Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-3-3
Power Dissipation
192W (Tc)
Drain to Source Voltage (Vds)
600 V
Input Capacitance (Ciss)
2040pF @25V(Vds)
Power Dissipation (Max)
192W (Tc)

FQA10N60C Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Operating Temperature
-55℃ ~ 150℃ (TJ)

FQA10N60C Documents

ON Semiconductor
8 Pages / 0.66 MByte

FQA10N60 Documents

Fairchild
MOSFET N-CH 600V 10A TO-3P
ON Semiconductor
MOSFET N-CH 600V 10A TO-3P
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