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FQA11N90C
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FQA11N90C Datasheet PDF (8 Pages)
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FQA11N90C Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-3-3
Power Dissipation
300W (Tc)
Drain to Source Voltage (Vds)
900 V
Rise Time
130 ns
Input Capacitance (Ciss)
3290pF @25V(Vds)
Fall Time
85 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

FQA11N90C Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

FQA11N90C Documents

ON Semiconductor
8 Pages / 1.5 MByte
ON Semiconductor
8 Pages / 0.69 MByte

FQA11N90 Documents

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FAIRCHILD SEMICONDUCTOR FQA11N90C_F109 Power MOSFET, N Channel, 11A, 900V, 0.91Ω, 10V, 5V
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Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3PN Tube
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Trans MOSFET N-CH 900V 11.4A 3Pin(3+Tab) TO-3P Rail
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Power MOSFET, N-Channel, QFET®, 900V, 11.4A, 960mΩ, TO-3P, TO-3PN 3L, 450-TUBE
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Trans MOSFET N-CH 900V 11A 3Pin(3+Tab) TO-3PN
Freescale
MOSFET N-CH 900V 11A TO-3P
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N-Channel QFET® MOSFET 900V, 11A, 1.1Ω
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