FQAF11N90 Datasheet PDF - Fairchild

●General Description

●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

●This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

●Features

●• 7.2A, 900V, RDS(on) = 0.96 Ω @ VGS = 10 V

●• Low gate charge ( typical 72 nC)

●• Low Crss ( typical 30 pF)

●• Fast switching

●• 100% avalanche tested

●• Improved dv/dt capability