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Part Datasheet Search > MOSFETs > ON Semiconductor > FQB34N20LTM Datasheet PDF
FQB34N20LTM
$ 3.064
FQB34N20LTM Datasheet PDF (8 Pages)
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FQB34N20LTM Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
2 Position
Drain to Source Resistance (on) (Rds)
0.075 Ω
Power Dissipation
3.13 W
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
200 V
Rise Time
520 ns
Input Capacitance (Ciss)
3000pF @25V(Vds)
Input Power (Max)
3.13 W
Fall Time
370 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.13 W

FQB34N20LTM Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.67 mm
Size-Width
9.65 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 150℃

FQB34N20LTM Documents

ON Semiconductor
8 Pages / 1.29 MByte
ON Semiconductor
10 Pages / 0.93 MByte
ON Semiconductor
4 Pages / 1.15 MByte

FQB34N20 Documents

Fairchild
200V N-Channel MOSFET
ON Semiconductor
Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 31 A, 80 mΩ, D2PAK, 800-REEL
Fairchild
FAIRCHILD SEMICONDUCTOR FQB34N20LTM MOSFET Transistor, N Channel, 31A, 200V, 75mohm, 10V, 2V
ON Semiconductor
Trans MOSFET N-CH 200V 31A 3Pin(2+Tab) D2PAK T/R
Fairchild
Trans MOSFET N-CH 200V 31A 3Pin(2+Tab) D2PAK T/R
Fairchild
200V LOGIC N-Channel MOSFET
ON Semiconductor
Power MOSFET, N-Channel, QFET®, 200 V, 31 A, 75 mΩ, D2PAK, TO-263 2L (D2PAK), 800-REEL
ON Semiconductor
N-Channel QFET® MOSFET 200V, 31A, 75mΩ
Fairchild
MOSFET
ON Semiconductor
Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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