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Part Datasheet Search > MOSFETs > Fairchild > FQD5N60CTM_WS Datasheet PDF
FQD5N60CTM_WS
$ 0.493
FQD5N60CTM_WS Datasheet PDF (10 Pages)
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FQD5N60CTM_WS Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TO-252-3
Power Dissipation
2.5W (Ta), 49W (Tc)
Drain to Source Voltage (Vds)
600 V
Input Capacitance (Ciss)
670pF @25V(Vds)
Input Power (Max)
2.5 W
Power Dissipation (Max)
2.5W (Ta), 49W (Tc)

FQD5N60CTM_WS Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

FQD5N60CTM_WS Documents

Fairchild
10 Pages / 0.54 MByte
Fairchild
18 Pages / 0.94 MByte

FQD5N60 Documents

Fairchild
FAIRCHILD SEMICONDUCTOR FQD5N60CTM Power MOSFET, N Channel, 2.8A, 600V, 2Ω, 10V, 4V
ON Semiconductor
N-Channel QFET® MOSFET 600V, 2.8A, 2.5Ω
Fairchild
Trans MOSFET N-CH 600V 2.8A 3Pin(2+Tab) DPAK
Fairchild
Trans MOSFET N-CH 600V 2.8A 3Pin(2+Tab) DPAK T/R
Fairchild
Trans MOSFET N-CH 600V 2.8A 3Pin(2+Tab) DPAK T/R
Fairchild
MOSFET N-CH 600V 2.8A
ON Semiconductor
MOSFET 600V, NCH MOSFET
ON Semiconductor
MOSFET N-CH 600V 2.8A DPAK
ON Semiconductor
MOSFET N-CH 600V 2.8A DPAK
ON Semiconductor
Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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