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FQD7N30TM Datasheet PDF - Fairchild

Manufacturer:

Fairchild

Category:

MOSFETs

Case Package:

TO-252-3

Description:

Power Field-Effect Transistor, 5.5A I(D), 300V, 0.7Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

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Documentation:

FQD7N30TM Datasheet (2 Pages)

FQD7N30TM Datasheet PDF (2 Pages)

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FQD7N30TM Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Voltage Rating (DC)

300 V

Current Rating

5.50 A

Case/Package

TO-252-3

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

700 mΩ

Polarity

N-Channel

Power Dissipation

2.5 W

Drain to Source Voltage (Vds)

300 V

Breakdown Voltage (Drain to Source)

300 V

Breakdown Voltage (Gate to Source)

±30.0 V

Continuous Drain Current (Ids)

5.50 A

Rise Time

75 ns

Input Capacitance (Ciss)

610pF @25V(Vds)

Input Power (Max)

2.5 W

Fall Time

35 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2500 mW

View Datasheet >

FQD7N30TM Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

6.6 mm

Size-Width

6.1 mm

Size-Height

2.3 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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FQD7N30TM Environmental

FQD7N30TM Export Classifications

FQD7N30TM Documents

FQD7N30TM Datasheet

Fairchild

2 Pages / 0.22 MByte

FQD7N30TM Other Datasheet PDF

Fairchild

18 Pages / 0.94 MByte

FQD7N30 Documents

FQD7N30 Datasheet PDF

Fairchild

300V N-Channel MOSFET

FQD7N30 Datasheet PDF

ON Semiconductor

Power MOSFET, N-Channel, QFET®, 300 V, 5.5 A, 700 mΩ, DPAK, 2500-REEL

FQD7N30TM Datasheet PDF

ON Semiconductor

MOSFET N-CH 300V 5.5A DPAK

FQD7N30TM Datasheet PDF

Fairchild

Power Field-Effect Transistor, 5.5A I(D), 300V, 0.7Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

FQD7N30TF Datasheet PDF

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Trans MOSFET N-CH 300V 5.5A 3Pin(2+Tab) DPAK T/R

FQD7N30TF Datasheet PDF

ON Semiconductor

MOSFET N-CH 300V 5.5A DPAK

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