$ 3.069

FQI11P06TU Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

MOSFETs

Case Package:

TO-262-3

Description:

MOSFET P-CH 60V 11.4A I2PAK

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FQI11P06TU Datasheet PDF (9 Pages)

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FQI11P06TU Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Case/Package

TO-262-3

Power Dissipation

3.13W (Ta), 53W (Tc)

Drain to Source Voltage (Vds)

60 V

Input Capacitance (Ciss)

550pF @25V(Vds)

Power Dissipation (Max)

3.13W (Ta), 53W (Tc)

FQI11P06TU Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Operating Temperature

-55℃ ~ 175℃ (TJ)

FQI11P06TU Environmental

FQI11P06TU Function Overview

FQI11P06TU Documents

FQI11P06TU Other Datasheet PDF

ON Semiconductor

9 Pages / 1.01 MByte

FQI11P06 Documents

FQI11P06 Datasheet PDF

Fairchild

P-Channel QFET MOSFET -60V, -11.4A, 175mΩ

FQI11P06TU Datasheet PDF

Fairchild

Trans MOSFET P-CH 60V 11.4A 3Pin(3+Tab) I2PAK Rail

FQI11P06TU Datasheet PDF

ON Semiconductor

MOSFET P-CH 60V 11.4A I2PAK

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