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FQI32N12V2TU
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FQI32N12V2TU Datasheet PDF (9 Pages)
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FQI32N12V2TU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-262-3
Power Dissipation
3.75W (Ta), 150W (Tc)
Drain to Source Voltage (Vds)
120 V
Input Capacitance (Ciss)
1860pF @25V(Vds)
Power Dissipation (Max)
3.75W (Ta), 150W (Tc)

FQI32N12V2TU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Operating Temperature
-55℃ ~ 175℃ (TJ)

FQI32N12V2TU Documents

ON Semiconductor
9 Pages / 0.63 MByte

FQI32N12V2 Documents

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Trans MOSFET N-CH 120V 32A 3Pin(3+Tab) I2PAK T/R
ON Semiconductor
MOSFET N-CH 120V 32A I2PAK
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