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Part Datasheet Search > MOSFETs > Fairchild > FQN1N60CTA Datasheet PDF
FQN1N60CTA
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FQN1N60CTA Datasheet PDF (8 Pages)
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FQN1N60CTA Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-226-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
9.3 Ω
Polarity
N-Channel
Power Dissipation
1 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
300 mA
Rise Time
21 ns
Input Capacitance (Ciss)
170pF @25V(Vds)
Input Power (Max)
1 W
Fall Time
27 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1 W

FQN1N60CTA Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Box (TB)
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

FQN1N60CTA Documents

Fairchild
8 Pages / 0.75 MByte
Fairchild
10 Pages / 0.87 MByte
Fairchild
3 Pages / 0.18 MByte

FQN1N60 Documents

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MOSFET N-CH 600V 300mA TO-92
Fairchild
FAIRCHILD SEMICONDUCTOR FQN1N60CTA Power MOSFET, N Channel, 300mA, 600V, 9.3Ω, 10V, 4V
Fairchild
Trans MOSFET N-CH 600V 0.3A 3Pin TO-92 Bulk
Fairchild
Trans MOSFET N-CH 600V 0.3A 3Pin TO-92
ON Semiconductor
MOSFET N-CH 600V 0.3A TO-92
ON Semiconductor
Small Signal Field-Effect Transistor, 0.3A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
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