FQPF10N20L Datasheet PDF - Fairchild

●General Description

●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,

●planar stripe, DMOS technology.

●Features

●• 6.8A, 200V, RDS(on)= 0.36Ω@VGS= 10 V

●• Low gate charge ( typical 13 nC)

●• Low Crss ( typical 14 pF)

●• Fast switching

●• 100% avalanche tested

●• Improved dv/dt capability

●• Low level gate drive requirement allowing direct operation from logic drivers