FQPF50N06L Datasheet PDF - Fairchild

●General Description

●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,

●planar stripe, DMOS technology.

●Features

●• 32.6A, 60V, RDS(on)= 0.021Ω@VGS= 10 V

●• Low gate charge ( typical 24.5 nC)

●• Low Crss ( typical 90 pF)

●• Fast switching

●• 100% avalanche tested

●• Improved dv/dt capability

●• 175°C maximum junction temperature rating