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Part Datasheet Search > ON Semiconductor > FQT1N60CTF-WS Datasheet PDF
FQT1N60CTF-WS
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FQT1N60CTF-WS Datasheet PDF (8 Pages)
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FQT1N60CTF-WS Specifications

TYPE
DESCRIPTION
Number of Pins
4 Pin
Case/Package
TO-261-4
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
9.3 Ω
Power Dissipation
2.1 W
Threshold Voltage
4 V
Input Capacitance
130 pF
Drain to Source Voltage (Vds)
600 V
Rise Time
21 ns
Input Capacitance (Ciss)
130pF @25V(Vds)
Fall Time
27 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2100 mW

FQT1N60CTF-WS Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

FQT1N60CTF-WS Documents

ON Semiconductor
8 Pages / 1.1 MByte
ON Semiconductor
52 Pages / 0.26 MByte

FQT1N60 Documents

Fairchild
FAIRCHILD SEMICONDUCTOR FQT1N60CTF_WS Power MOSFET, N Channel, 200mA, 600V, 9.3Ω, 10V, 4V
ON Semiconductor
N-Channel QFET® MOSFET 600V, 0.2A, 11.5Ω
ON Semiconductor
Trans MOSFET N-CH 600V 0.2A 4Pin(3+Tab) SOT-223 T/R
Fairchild
N-Channel QFET MOSFET 600V, 0.2A, 11.5Ω
Fairchild
N-Channel QFET MOSFET 600V, 0.2A, 11.5Ω
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