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Part Datasheet Search > MOSFETs > Fairchild > FQT4N20TF Datasheet PDF
FQT4N20TF
$ 0.099

FQT4N20TF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Voltage Rating (DC)
200 V
Current Rating
850 mA
Case/Package
SOT-223-4
Drain to Source Resistance (on) (Rds)
1.40 Ω
Polarity
N-Channel
Power Dissipation
2.2W (Tc)
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
850 mA
Input Capacitance (Ciss)
220pF @25V(Vds)
Input Power (Max)
2.2 W
Power Dissipation (Max)
2.2W (Tc)

FQT4N20TF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

FQT4N20TF Documents

Fairchild
214 Pages / 4.35 MByte
Fairchild
8 Pages / 0.61 MByte
Fairchild
1 Pages / 0.06 MByte

FQT4N20 Documents

Fairchild
200V N-Channel MOSFET
ON Semiconductor
Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 0.85 A, 1.4 Ω, SOT-223, 4000-REEL
Fairchild
Trans MOSFET N-CH 200V 0.85A 4Pin(3+Tab) SOT-223 T/R
ON Semiconductor
Trans MOSFET N-CH 200V 0.85A 4Pin(3+Tab) SOT-223 T/R
Fairchild
Trans MOSFET N-CH 200V 0.85A 4Pin(3+Tab) SOT-223 T/R
Fairchild
N-Channel QFET® MOSFET (200V, 0.85A, 1.4Ω)
ON Semiconductor
MOSFET N-CH 200V 0.85A SOT-223
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