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FQU1N80TU Datasheet PDF - Fairchild

Manufacturer:

Fairchild

Category:

MOSFETs

Case Package:

TO-251-3

Description:

Trans MOSFET N-CH 800V 1A 3Pin(3+Tab) IPAK Rail

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

FQU1N80TU Datasheet (9 Pages)

Package Outline Dimension on7 Page 8 Page

Part Numbering System on2 Page

FQU1N80TU Datasheet PDF (9 Pages)

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FQU1N80TU Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

800 V

Current Rating

1.00 A

Case/Package

TO-251-3

Drain to Source Resistance (on) (Rds)

20 Ω

Polarity

N-Channel

Power Dissipation

2.5 W

Drain to Source Voltage (Vds)

800 V

Breakdown Voltage (Drain to Source)

800 V

Breakdown Voltage (Gate to Source)

±30.0 V

Continuous Drain Current (Ids)

1.00 A

Rise Time

25 ns

Input Capacitance (Ciss)

195pF @25V(Vds)

Input Power (Max)

2.5 W

Fall Time

25 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2.5W (Ta), 45W (Tc)

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FQU1N80TU Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Rail, Tube

Size-Length

6.8 mm

Size-Width

2.5 mm

Size-Height

6.3 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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FQU1N80TU Environmental

FQU1N80TU Export Classifications

FQU1N80TU Function Overview

FQU1N80TU Documents

FQU1N80TU Datasheet

Fairchild

9 Pages / 1.24 MByte

FQU1N80TU Other Datasheet PDF

Fairchild

11 Pages / 1.41 MByte

FQU1N80 Documents

FQU1N80 Datasheet PDF

Fairchild

MOSFET N-CH 800V 1A IPAK

FQU1N80 Datasheet PDF

ON Semiconductor

Power MOSFET, N-Channel, QFET®, 800 V, 1.0 A, 20 Ω, IPAK, 5040-TUBE

FQU1N80TU Datasheet PDF

Fairchild

Trans MOSFET N-CH 800V 1A 3Pin(3+Tab) IPAK Rail

FQU1N80TU Datasheet PDF

ON Semiconductor

Discrete MOSFETs

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