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Part Datasheet Search > IGBTs > Infineon > FS150R12KT4B11BOSA1 Datasheet PDF
FS150R12KT4B11BOSA1
$ 111.285
FS150R12KT4B11BOSA1 Datasheet PDF (8 Pages)
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FS150R12KT4B11BOSA1 Specifications

TYPE
DESCRIPTION
Number of Pins
35 Pin
Case/Package
AG-ECONO3-4
Power Dissipation
750 W
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
9.35nF @25V
Input Power (Max)
750 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
750000 mW

FS150R12KT4B11BOSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Operating Temperature
-40℃ ~ 150℃

FS150R12KT4B11BOSA1 Documents

Infineon
8 Pages / 0.71 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
33 Pages / 2.24 MByte
Infineon
1 Pages / 0.13 MByte

FS150R12KT4B11 Documents

Infineon
Trans IGBT Module N-CH 1.2kV 150A 35Pin ECONO 3
Infineon
Igbt Modules Up To 1200V Sixpack
Infineon
Trans IGBT Module N-CH 1200V 150A 750000mW 35Pin Tray
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