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FZ1200R17HE4HOSA2
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FZ1200R17HE4HOSA2 Datasheet PDF (9 Pages)
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FZ1200R17HE4HOSA2 Specifications

TYPE
DESCRIPTION
Case/Package
AG-IHMB130-2
Breakdown Voltage (Collector to Emitter)
1700 V
Input Capacitance (Cies)
97nF @25V
Input Power (Max)
7800 W

FZ1200R17HE4HOSA2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Operating Temperature
-40℃ ~ 150℃

FZ1200R17HE4HOSA2 Documents

Infineon
9 Pages / 0.56 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
40 Pages / 6.73 MByte

FZ1200R17HE4 Documents

Infineon
Trans IGBT Module N-CH 1.7kV 1.2kA
Infineon
1700V IHMB 130mm single switch IGBT Module with Trench/Fieldstop IGBT4 - The best solution for your industry applications.
Infineon
1700V IHMB 130mm single switch IGBT Module with Trench/Fieldstop IGBT4 - The best solution for your industry applications
Infineon
1700V IHMB 130mm single switch IGBT Module with Trench/Fieldstop IGBT4 - The best solution for your industry applications.
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