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Part Datasheet Search > IGBTs > Infineon > FZ400R12KE3B1HOSA1 Datasheet PDF
FZ400R12KE3B1HOSA1
$ 146.195
FZ400R12KE3B1HOSA1 Datasheet PDF (8 Pages)
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FZ400R12KE3B1HOSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Screw
Number of Pins
5 Pin
Case/Package
AG-62MM-2
Power Dissipation
2250000 mW
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
28nF @25V
Input Power (Max)
2250 W
Operating Temperature (Max)
125 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
2250000 mW

FZ400R12KE3B1HOSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Size-Length
106.4 mm
Size-Width
61.4 mm
Size-Height
36.5 mm
Operating Temperature
-40℃ ~ 125℃

FZ400R12KE3B1HOSA1 Documents

Infineon
8 Pages / 0.67 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
40 Pages / 6.73 MByte

FZ400R12KE3B1 Documents

Infineon
Trans IGBT Module N-CH 1200V 650A 2250000mW 5Pin 62MM Tray
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Insulated Gate Bipolar Transistor, 650A I(C), 1200V V(BR)CES, N-Channel,
Infineon
Trans IGBT Module N-CH 1200V 650A 2250000mW 5Pin Tray
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