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Part Datasheet Search > Infineon > FZ800R12KS4B2NOSA1 Datasheet PDF
FZ800R12KS4B2NOSA1
$ 1007.1
FZ800R12KS4B2NOSA1 Datasheet PDF (8 Pages)
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FZ800R12KS4B2NOSA1 Specifications

TYPE
DESCRIPTION
Number of Pins
7 Pin
Case/Package
A-IHM130-1
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
52nF @25V
Input Power (Max)
7600 W

FZ800R12KS4B2NOSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Operating Temperature
-40℃ ~ 125℃

FZ800R12KS4B2NOSA1 Documents

Infineon
8 Pages / 0.4 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
36 Pages / 5.44 MByte

FZ800R12KS4B2 Documents

Infineon
Trans IGBT Module N-CH 1.2kV 1.2kA 7Pin IHM130
Eupec
High Power Module with AlSiC base plate and short tail IGBT2 for high switching frequency
Infineon
1200V IHM 130mm single switch IGBT Module with fast IGBT2, enlarged diode and AlSiC base-plate - The best solution fo...
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