$ 160.814

FZ900R12KE4HOSA1 Datasheet PDF - Infineon

Manufacturer:

Infineon

Case Package:

62MM-2

Description:

Trans IGBT Module N-CH 1200V 900A 4300000mW 4Pin 62MM-2 Tray

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

FZ900R12KE4HOSA1 User Reference Manual Guide (3 Pages)

FZ900R12KE4HOSA1 Datasheet PDF (3 Pages)

View Datasheet

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FZ900R12KE4HOSA1 Specifications

TYPE

DESCRIPTION

Number of Pins

4 Pin

Case/Package

62MM-2

Power Dissipation

4.3 kW

Breakdown Voltage (Collector to Emitter)

1200 V

Input Capacitance (Cies)

56nF @25V

Input Power (Max)

4300 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-40 ℃

Power Dissipation (Max)

4300000 mW

FZ900R12KE4HOSA1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tray

Operating Temperature

-40℃ ~ 150℃ (TJ)

FZ900R12KE4HOSA1 Environmental

FZ900R12KE4HOSA1 Function Overview

FZ900R12KE4HOSA1 Documents

FZ900R12KE4HOSA1 User Reference Manual Guide

Infineon

3 Pages / 0.36 MByte

FZ900R12KE4HOSA1 Other Datasheet PDF

Infineon

4 Pages / 0.23 MByte

FZ900R12KE4HOSA1 Notice File

Infineon

7 Pages / 0.25 MByte

FZ900R12KE4 Documents

FZ900R12KE4 Datasheet PDF

Infineon

Trans IGBT Module N-CH 1.2kV 900A 4Pin

FZ900R12KE4HOSA1 Datasheet PDF

Infineon

Trans IGBT Module N-CH 1200V 900A 4300000mW 4Pin 62MM-2 Tray

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