FZT558TA Datasheet PDF - Diodes

●The PNP FZT558TA general purpose bipolar junction transistor, developed by Diodes Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 7 V.