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GS66516T-E02-MR Datasheet PDF - GAN Systems

Manufacturer:

GAN Systems

Case Package:

GaNPX-4

Description:

MOSFET 650V 60A E-Mode GaN

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Documentation:

GS66516T-E02-MR Datasheet (14 Pages)

GS66516T-E02-MR Datasheet PDF (14 Pages)

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GS66516T-E02-MR Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Case/Package

GaNPX-4

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

27 mΩ

Threshold Voltage

1.6 V

Breakdown Voltage (Drain to Source)

650 V

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

55 ℃

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GS66516T-E02-MR Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

9 mm

Size-Width

7.64 mm

Size-Height

0.54 mm

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GS66516T-E02-MR Environmental

GS66516T-E02-MR Documents

GS66516T-E02-MR Datasheet

GAN Systems

14 Pages / 0.94 MByte

GS66516TE02 Documents

GS66516T-E02-MR Datasheet PDF

GAN Systems

MOSFET 650V 60A E-Mode GaN

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