H11AA814A3SD Datasheet PDF - Fairchild

●DESCRIPTION

●The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package.

●The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

●FEATURES

●• Compact 4-pin package

●• Current transfer ratio in selected groups:

●   H11AA814: 20-300%       H11A817: 50-600%

●   H11AA814A: 50-150%      H11A817A: 80-160%

●   H11A617A: 40%-80%       H11A817B: 130-260%

●   H11A617B: 63%-125%      H11A817C: 200-400%

●   H11A617C: 100%-200%     H11A817D: 300-600%

●   H11A617D: 160%-320%

●• Minimum BVCEO of 70V guaranteed

●APPLICATIONS

●H11AA814 Series

●• AC line monitor

●• Unknown polarity DC sensor

●• Telephone line interface

●H11A617 and H11A817 Series

●• Power supply regulators

●• Digital logic inputs

●• Microprocessor inputs