H11D1SM Datasheet PDF - Fairchild

●General Description

●The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

●Features

●■ High voltage:

●   – MOC8204M, BVCER = 400V

●   – H11D1M, H11D2M, BVCER = 300V

●   – H11D3M, BVCER = 200V

●■ High isolation voltage:

●   – 7500 VAC peak, 1 second

●■ Underwriters Laboratory (UL) recognized File # E90700, Volume 2

●■ IEC 60747-5-2 approved (ordering option V)

●Applications

●■ Power supply regulators

●■ Digital logic inputs

●■ Microprocessor inputs

●■ Appliance sensor systems

●■ Industrial controls