H11D4SD Datasheet PDF - Fairchild

●DESCRIPTION

●The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

●FEATURES

●• High Voltage

●   - H11D1, H11D2, BVCER = 300 V

●   - H11D3, H11D4, BVCER = 200 V

●• High isolation voltage

●   - 5300 VAC RMS - 1 minute

●   - 7500 VAC PEAK - 1 minute

●• Underwriters Laboratory (UL) recognized File# E90700

●APPLICATIONS

●• Power supply regulators

●• Digital logic inputs

●• Microprocessor inputs

●• Appliance sensor systems

●• Industrial controls