HCF40109BM1 Datasheet PDF - ST Microelectronics

●DESCRIPTION

●HCF40109B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages.

●HCF40109B contains four low-to-high voltage level shifting circuits.

●■ INDIPENDENCE OF POWER SUPPLY SEQUENCE CONSIDERATIONS - VCC CAN EXCEED VDD, INPUT SIGNALS CAN EXCEED BOTH VCC AND VDD

●■ UP AND DOWN LEVEL SHIFTING CAPABILITY

●■ THREE-STATE OUTPUTS WITH SEPARATE ENABLE CONTROLS

●■ STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS

●■ QUIESCENT CURRENT SPECIFIED UP TO 20V

●■ 5V, 10V, AND 15V PARAMETRIC RATINGS

●■ INPUT LEAKAGE CURRENT

●   II = 100nA (MAX) AT VDD = 18V TA = 25°C

●■ 100% TESTED FOR QUIESCENT CURRENT

●■ MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES"