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Part Datasheet Search > ON Semiconductor > HGTG12N60C3D Datasheet PDF
HGTG12N60C3D
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HGTG12N60C3D Datasheet PDF (8 Pages)
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HGTG12N60C3D Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Power Dissipation
104 W
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
42 ns
Input Power (Max)
104 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
104000 mW

HGTG12N60C3D Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not For New Designs
Packaging
Tube
Operating Temperature
-40℃ ~ 150℃ (TJ)

HGTG12N60C3D Documents

ON Semiconductor
8 Pages / 0.11 MByte
ON Semiconductor
13 Pages / 0.57 MByte
ON Semiconductor
1 Pages / 0.44 MByte

HGTG12N60C3 Documents

Fairchild
FAIRCHILD SEMICONDUCTOR HGTG12N60C3D IGBT Single Transistor, 24A, 1.8V, 104W, 600V, TO-247, 3Pins
ON Semiconductor
Trans IGBT Chip N-CH 600V 24A 104000mW 3Pin(3+Tab) TO-247 Rail
Harris
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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