HGTP12N60C3 Datasheet PDF - Fairchild

●The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

●high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between

●25oC and 150oC.

●The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor

●controls, power supplies and drivers for solenoids, relays and contactors.

●Features

●• 24A, 600V at TC= 25oC

●• 600V Switching SOA Capability

●• Typical Fall Time. . . . . . . . . . . . . . . .  230ns at TJ= 150oC

●• Short Circuit Rating

●• Low Conduction Loss