HM3-6514-9 Datasheet PDF - Intersil

●Description

●The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation.

●On-chip latches are provided for addresses allowing efficient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in expanded memory arrays.

●Gated inputs allow lower operating current and also eliminate the need for pull up or pull down resistors. The HM-6514 is a fully static RAM and may be maintained in any state for an indefinite period of time.

●Data retention supply voltage and supply current are guaran teed over temperature.

●Features

●• Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max

●• Low Power Operation . . . . . . . . . . . . . 35mW/MHz Max

●• Data Retention . . . . . . . . . . . . . . . . . . . . . . . at 2.0V Min

●• TTL Compatible Input/Output

●• Common Data Input/Output

●• Three-State Output

●• Standard JEDEC Pinout

●• Fast Access Time. . . . . . . . . . . . . . . . . . 120/200ns Max

●• 18 Pin Package for High Density

●• On-Chip Address Register

●• Gated Inputs - No Pull Up or Pull Down Resistors Required