HMC452QS16G Datasheet PDF - ADI

●Product Details

●The HMC452QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 22.5 dB at 0.4 GHz and 9 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +43 dBm at 0.4 GHz or +48 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC452QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.

●Applications

● GSM, GPRS & EDGE 

● CDMA & W-CDMA 

● CATV/Cable Modem 

● Fixed Wireless & WLL

●### Features and Benefits

● Output IP3: +48 dBm

● 22.5 dB Gain @ 400 MHz

● 9 dB Gain @ 2100 MHz

● 53% PAE @ +31 dBm Pout

● +24 dBm CDMA2000

●Channel Power@ -45 dBc ACP

● Single +5V Supply

● Integrated Power Control (VPD)

● QSOP16G SMT Package: 29.4 mm²