HN1B04FE-Y Datasheet PDF - Toshiba

●Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Q1: • High voltage and high current : VCEO = 50V, IC = 150mA (max) • High hFE : hFE = 120~400 • Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2: • High voltage and high current : VCEO = −50V, IC = −150mA (max) • High hFE : hFE = 120~400 • Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) • Audio Frequency General Purpose Amplifier Applications