HN1B04FU-GR(L,F,T) Datasheet PDF - Toshiba

●Compared to other transistors, the npn and PNP HN1B04FU-GR(L,F,T) general purpose bipolar junction transistor, developed by Toshiba, can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 125 °C.