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HUF75345S3ST
$ 5.51
HUF75345S3ST Datasheet PDF (12 Pages)
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HUF75345S3ST Specifications

TYPE
DESCRIPTION
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Dissipation
325 W
Drain to Source Voltage (Vds)
55 V
Rise Time
118 ns
Input Capacitance (Ciss)
4000pF @25V(Vds)
Input Power (Max)
325 W
Fall Time
26 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
325000 mW

HUF75345S3ST Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
-55℃ ~ 175℃

HUF75345S3ST Documents

ON Semiconductor
12 Pages / 0.88 MByte
ON Semiconductor
16 Pages / 0.58 MByte
ON Semiconductor
10 Pages / 0.1 MByte

HUF75345S3 Documents

Fairchild
Trans MOSFET N-CH 55V 75A 3Pin(2+Tab) D2PAK Rail
ON Semiconductor
MOSFET N-CH 55V 75A D2PAK
ON Semiconductor
Trans MOSFET N-CH Si 55V 75A 3Pin(2+Tab) D2PAK T/R
Fairchild
N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ, 2LD,TO263, SURFACE MOUNT, 800/TAPE REEL
Fairchild
Trans MOSFET N-CH Si 55V 75A 3Pin(2+Tab) D2PAK Rail
Intersil
75A, 55V, 0.007Ω, N-Channel UltraFET Power MOSFETs
ON Semiconductor
MOSFET N-CH 55V 75A D2PAK
Harris
Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Intersil
75A, 55V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Harris
Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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