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IAUT165N08S5N029ATMA2 Datasheet PDF - Infineon

Manufacturer:

Infineon

Case Package:

PG-HSOF-8

Description:

Mosfet n-Ch 165A 80V 120V 8hsof

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

IAUT165N08S5N029ATMA2 Datasheet (9 Pages)IAUT165N08S5N029ATMA2 Application Note (35 Pages)

IAUT165N08S5N029ATMA2 Specifications

TYPE

DESCRIPTION

Number of Pins

9 Pin

Case/Package

PG-HSOF-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.0024 Ω

Power Dissipation

167 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

80 V

Rise Time

9 ns

Input Capacitance (Ciss)

4900pF @40V(Vds)

Fall Time

29 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

167000 mW

View Datasheet >

IAUT165N08S5N029ATMA2 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

View Datasheet >

IAUT165N08S5N029ATMA2 Environmental

IAUT165N08S5N029ATMA2 Function Overview

IAUT165N08S5N029ATMA2 Documents

IAUT165N08S5N029ATMA2 Datasheet

Infineon

9 Pages / 0.21 MByte

IAUT165N08S5N029ATMA2 Other Datasheet PDF

Infineon

2 Pages / 0.19 MByte

IAUT165N08S5N029ATMA2 Application Note

Infineon

35 Pages / 2.04 MByte

IAUT165N08S5N029 Documents

IAUT165N08S5N029 Datasheet PDF

Infineon

OptiMOSâ¢-5 Power-Transistor

IAUT165N08S5N029ATMA2 Datasheet PDF

Infineon

Mosfet n-Ch 165A 80V 120V 8hsof

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